ELT 236

COURSE SYLLABUS

1.	TITLE OF COURSE:	SEMICONDUCTOR MANUFACTURING II
	PREFIX/NUMBER:	ELT 236	CREDIT HOURS:	3.0
2.	PREREQUISITE:	ELT 235

3.	RESOURCES NEEDED:
	TEXT:	Microchip Fabrication: A Practical Guide to Semiconductor Processing. Peter Van Zant, Third Edition
	SUPPLIES:	Scientific calculator, clean room garments, notebook, 3 ½ HD floppy diskettes, and pencil
4.	COURSE DESCRIPTION:	Serves as the second course in a two-course capstone sequence in semiconductor processing. Covers the following manufacturing processes: doping, chemical vapor deposition, metalizing, and test/sort.
5.	COURSE GOAL:	The student will demonstrate the use of equipment sequence in the following semiconductor manufacturing processes.

6.	COURSE OBJECTIVES:
	After completion of this course the student will be able to:
	1.	Sketch wafer cross sections of various process steps.
	2.	Explain the reaction of photoresist to light.
	3.	List steps to photomasking.
	4.	Describe the need for, and the process used in, doublemasking, multiplayer resist processing, and planarization techniques.
	5.	List and compare the optical and the nonoptical methods of alignment and exposure.
	6.	List the methods of developing.
	7.	Explain the purpose of soft and hard bake.
	8.	Explain the methods and relative merits of wet and dry etch.
	9.	Describe the use of resist strippers.
	10.	Explain the purpose and methods of final inspection.
	11.	Describe how resolution can be improved.
	12.	State the advantage of an image-reversal process.
	13.	Identify the parts and advantages of pellicle.
	14.	Describe the principle of chemical vapor deposition.
	15.	List the materials deposited by CVD.
	16.	Describe the difference between various CVD systems.
	17.	Identify the components of a CVD reactor.
	18.	Describe the purpose and use of a thin-film fuse.
	19.	List the materials used in metalization of semiconductor devices.
	20.	Describe the operation of various metalization equipment.
	21.	List the methods and advantages of microscope and SEM inspection of wafer surfaces.
	22.	Explain the method used for pinhole counting.
	23.	List the four functions of a semiconductor package.
	24.	List the common parts of a package.
	25.	Describe the major packaging process flows.

7.	EVALUATION PROCEDURES:
	The student will be graded on his/her demonstrated skills at understanding and applying Advanced Semiconductor Manufacturing Process.
	You will be given laboratory assignments. These must be completed on time in order to receive full credit.

	Laboratory assignments	30%
	Quizzes and tests	20%
	Exams	40%
	Attitude, teamwork, and safety	10%
	Attendance is critical for completion of all assignments.

	In order to successfully complete this course, ALL SMT II assignments must be completed to a minimum grade of 70%. For the Intel program the student must achieve a minimum GPA of 3.0.
	During open lab time, students will have the opportunity to compare notes and discuss semiconductor projects as a team with other students.


Special Remarks:
1.	Attendance: College policy states that students may be dropped from enrollment when absent 20% of the scheduled class meetings. If enrolled from the beginning of the term, 15 hours will usually constitute 20% of a four-credit semester course which meets five hours per week. Reinstatement procedures are described in the PCC catalog.
2.	Tardy Policy: A student who is late three times (enters classroom after the instructor has taken roll) will be charged with one full absence unless the student can provide valid reasons for one or more of these tardies.
3.	Assignments/Missed Exams: It is the student's responsibility, whether present or absent, to obtain all material presented and to complete all course assignments. If prior arrangements are made or extenuating circumstances exist, makeup of tests may be allowed. Late homework papers will not be accepted unless those same extenuating circumstances exist. Makeup of quizzes is to be at the instructor's discretion.


8.	COURSE OUTLINE:
	Tentative Schedule
	I.		Fundamentals of Semiconductor Processing
		(A)	Conductors
		(B)	Insulators
		(C)	Semiconductors
		(D)	Resistance
		(E)	Resistivity
		(F)	Conductivity
		(G)	Uses of semiconductors
	II.		Semiconductor Doping
		(A)	Effects of dopants
		(B)	Problems
	III.		Crystal Growth
		(A)	Techniques
		(B)	Problems
		(C)	Crystallography
	IV.		Epitaxial Growth
		(A)	Techniques
		(B)	Problems
		(C)	Growth
	V.		Diffusion
		(A)	Techniques
		(B)	Problems
		(C)	Time dependence
	VI.		Oxidation
		(A)	Theory
		(B)	Techniques
	VII.		Crystal Defects
		(A)	Surface damage
		(B)	Carbide, nitride, and melting
	VIII		Cleaning Techniques
		(A)	Etching silicon
		(B)	Si02
	IX.		Masking
		(A)	Procedures
		(B)	Problems
	X.		Photoresist Processing
		(A)	Procedures
		(B)	Problems
	XI.		Metalization
		(A)	Techniques
		(B)	Problems
	XII.		Vapor Deposition
		(A)	Techniques
		(B)	Problems

9.	METHODS OF INSTRUCTION:
	To be successful in this course, students are expected to participate in discussions, readings, in-class writing, and peer review activities. The instructor may assign point values to such activities.
10.	ACADEMIC INTEGRITY:
	The very nature of higher education requires that students adhere to accepted standards of academic integrity. Therefore, Pueblo Community College has adopted a policy of academic conduct as described in the Student Handbook. Violation of academic integrity may be defined to include the following: cheating, plagiarism, falsification and fabrication, abuse of academic materials, complicity in academic dishonesty, and personal misrepresentation. It is the student’s responsibility to be aware of the behaviors that constitute academic dishonesty. Sanctions for violating the standards of academic integrity may include warning, probation, suspension, and/or failure of the course or assignment at the discretion of the instructor.
11.	ADA NOTICE:
	Students who have a documented disability may be eligible to receive accommodations for this class. Please contact the Disability Resources Center at 549-3446 for further information.