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COURSE SYLLABUS ELT 235 SEMICONDUCTOR MANUFACTURING I Return to the ELT 235 main page 8. COURSE OUTLINE: Tentative Schedule I. Fundamentals of Semiconductor Processing (A) Conductors (B) Insulators (C) Semiconductors (D) Resistance (E) Resistivity (F) Conductivity (G) Uses of semiconductors II. Semiconductor Doping (A) Effects of dopants (B) Problems III. Crystal Growth (A) Techniques (B) Problems (C) Crystallography IV. Epitaxial Growth (A) Techniques (B) Problems (C) Growth V. Diffusion (A) Techniques (B) Problems (C) Time dependence VI. Oxidation (A) Theory (B) Techniques VII. Crystal Defects (A) Surface damage (B) Carbide, nitride, and melting VIII Cleaning Techniques (A) Etching silicon (B) Si02 IX. Masking (A) Procedures (B) Problems X. Photoresist Processing (A) Procedures (B) Problems XI. Metalization (A) Techniques (B) Problems XII. Vapor Deposition (A) Techniques (B) Problems
COURSE SYLLABUS
ELT 235 SEMICONDUCTOR MANUFACTURING I
Return to the ELT 235 main page
COURSE OUTLINE:
Tentative Schedule
I.
Fundamentals of Semiconductor Processing
(A)
Conductors
(B)
Insulators
(C)
Semiconductors
(D)
Resistance
(E)
Resistivity
(F)
Conductivity
(G)
Uses of semiconductors
II.
Semiconductor Doping
Effects of dopants
Problems
III.
Crystal Growth
Techniques
Crystallography
IV.
Epitaxial Growth
Growth
V.
Diffusion
Time dependence
VI.
Oxidation
Theory
VII.
Crystal Defects
Surface damage
Carbide, nitride, and melting
VIII
Cleaning Techniques
Etching silicon
Si02
IX.
Masking
Procedures
X.
Photoresist Processing
XI.
Metalization
XII.
Vapor Deposition